Speaker: Jong-Hyun Ahn
Affiliation: SKKU Advanced Institute of Nanotechnology, Korea
Abstract Details: The outstanding physical and chemical properties of graphene, a single atomic layer of carbon atoms, have attracted significant attention. One of the most important advantages of graphene in the field of electronics is its superb charge carrier mobility. The mobility of ideal exfoliated graphene spans an extraordinarily large range, from 10,000-15,000 cm2/V·s on SiO2 insulating substrates to 200,000 cm2/V·s in suspended structures, suggesting that graphene may potentially outperform established inorganic materials in certain applications, such as high-frequency transistors. Although useful devices have been prepared based on exfoliated graphene, the tiny size of exfoliated graphene particles limits the practical utility of such graphene in electronics applications. Recent studies designed to address this issue have explored the preparation of large-area high-quality graphene via epitaxial growth or chemical vapor deposition (CVD). Many research groups have reported the fabrication of graphene-based transistors via the epitaxial growth of graphene directly on rigid insulating silicon carbide (SiC) wafers. These transistors operate at high frequencies, up to 100 GHz. Other researchers have synthesized graphene on Ni or Cu catalysts using CVD methods and have demonstrated the utility of device integration on a variety of substrates using transfer techniques. The CVD approach is attractive because it permits fabrication over large areas and expands the applicability of graphene to flexible or fully stretchable devices on thin plastic or elastomeric substrates. In this talk, I will discuss recent progress in graphene film preparation and its various applications in the field of electronics, focusing on techniques to integrate them into devices on compliant substrates. Although significant engineering challenges including band gap opening and improved reliability still exist, it could create interesting opportunities for developing future electronic applications because many basic aspects of technically feasible approaches are now emerging.Click HERE for directions

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