Speaker: J. N. B. Rodrigues
Abstract Details: Recently, Tsen et al. [1] demonstrated how one can probe the electronic transport properties of a single grain boundary in graphene. Following this remarkable possibility, in this seminar we will investigate the electronic transport across periodic defect lines. In the continuum low-energy limit, such defects act as infinitesimally thin stripes separating two regions where the Dirac Hamiltonian governs the low-energy phenomena. The behavior of these systems is controlled by the boundary condition imposed by the defect on the massless Dirac fermions. We will demonstrate how this low-energy boundary condition can be computed from the tight-binding model of the defect line. We will illustrate this procedure by considering a simple zigzag oriented defect line solely composed by pentagonal carbon rings: the pentagon-only defect line. The recently observed zz(558) defect line [2], as well as the zz(5757) defect line will also be considered [3,4]. [1] A. W. Tsen, L. Brown, M. P. Levendorf, F. Ghahari, P. Y. Huang, R. W. Havener, C. S. Ruiz-Vargas, D. A. Muller, P. Kim and J. Park, Science 336, 1143 (2012). [2] J. Lahiri, Y. Lin, P. Bozkurt, I. I. Oleynik and M. Batzill, Nature Nanotechnology 5, 326 (2010). [3] J. N. B. Rodrigues, N. M. R. Peres and J. M. B. Lopes dos Santos, PRB 86, 214206 (2012). [4] J. N. B. Rodrigues, N. M. R. Peres and J. M. B. Lopes dos Santos, JPCM 25, 075303 (2013).Click HERE for directions

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