Niu, Lin; Liu, Xinfeng; Cong, Chunxiao; Wu, Chunyang; Wu, Di; Chang, Tay Rong; Wang, Hong; Zeng, Qingsheng; Zhou, Jiadong; Wang, Xingli; Fu, Wei; Yu, Peng; Fu, Qundong; Najmaei, Sina; Zhang, Zhuhua; Yakobson, Boris I; Tay, Beng Kang; Zhou, Wu; Jeng, Horng Tay; Lin, Hsin; Sum, Tze Chien; Jin, Chuanhong; He, Haiyong; Yu, Ting; Liu, Zheng Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-Matter Interactions Journal Article 120 ADVANCED MATERIALS, 27 (47), pp. 7800-7808, 2015, ISSN: 0935-9648. Links | BibTeX @article{ISI:000367837900015,
title = {Controlled Synthesis of Organic/Inorganic van der Waals Solid for Tunable Light-Matter Interactions},
author = {Lin Niu and Xinfeng Liu and Chunxiao Cong and Chunyang Wu and Di Wu and Tay Rong Chang and Hong Wang and Qingsheng Zeng and Jiadong Zhou and Xingli Wang and Wei Fu and Peng Yu and Qundong Fu and Sina Najmaei and Zhuhua Zhang and Boris I Yakobson and Beng Kang Tay and Wu Zhou and Horng Tay Jeng and Hsin Lin and Tze Chien Sum and Chuanhong Jin and Haiyong He and Ting Yu and Zheng Liu},
doi = {10.1002/adma.201503367},
times_cited = {120},
issn = {0935-9648},
year = {2015},
date = {2015-12-16},
journal = {ADVANCED MATERIALS},
volume = {27},
number = {47},
pages = {7800-7808},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
|
Chow, Wai Leong; Luo, Xin; Quek, Su Qing; Tay, Beng Kang Evolution of Raman Scattering and Electronic Structure of Ultrathin Molybdenum Disulfide by Oxygen Chemisorption Journal Article 18 ADVANCED ELECTRONIC MATERIALS, 1 (1-2), 2015, ISSN: 2199-160X. Abstract | Links | BibTeX @article{ISI:000357653000008,
title = {Evolution of Raman Scattering and Electronic Structure of Ultrathin Molybdenum Disulfide by Oxygen Chemisorption},
author = {Wai Leong Chow and Xin Luo and Su Qing Quek and Beng Kang Tay},
doi = {10.1002/aelm.201400037},
times_cited = {18},
issn = {2199-160X},
year = {2015},
date = {2015-02-01},
journal = {ADVANCED ELECTRONIC MATERIALS},
volume = {1},
number = {1-2},
publisher = {WILEY},
address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA},
abstract = {Molybdenum disulfide (MoS2) has attracted vast interest in the fields of electronic, optoelectronic, and valleytronic applications due to its unique properties. Because of its low dimensionality, MoS2 is susceptible to oxygen absorption in ambient environments, which can alter its electrical and optical properties. Here, a new method to introduce oxygen chemisorption in ultrathin MoS2 by controlled oxygen plasma treatment is presented. Using Raman spectroscopy, a red shift in the frequency of E-2g(1) mode with increasing oxygen chemisorption is found, whereas, the frequency of A(1g) mode is fixed. Interestingly, the absorption peak in the photoluminescence spectra red shifts, indicating an optical band gap reduction upon oxygen chemisorption. The behaviors of these different shifts are reproduced and elucidated by density functional theory calculations. It is found that the red shift of the E-2g(1) Raman peak is caused by a softening of in-plane Mo-S force constants, while the red shift in the photoluminescence peak is due to a reduction of the electronic band gap in oxygen-chemisorbed MoS2. The results shine light on the fundamental understanding of chemical interactions between oxygen and MoS2 and provide an alternative way to achieve band gap engineering in MoS2.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Molybdenum disulfide (MoS2) has attracted vast interest in the fields of electronic, optoelectronic, and valleytronic applications due to its unique properties. Because of its low dimensionality, MoS2 is susceptible to oxygen absorption in ambient environments, which can alter its electrical and optical properties. Here, a new method to introduce oxygen chemisorption in ultrathin MoS2 by controlled oxygen plasma treatment is presented. Using Raman spectroscopy, a red shift in the frequency of E-2g(1) mode with increasing oxygen chemisorption is found, whereas, the frequency of A(1g) mode is fixed. Interestingly, the absorption peak in the photoluminescence spectra red shifts, indicating an optical band gap reduction upon oxygen chemisorption. The behaviors of these different shifts are reproduced and elucidated by density functional theory calculations. It is found that the red shift of the E-2g(1) Raman peak is caused by a softening of in-plane Mo-S force constants, while the red shift in the photoluminescence peak is due to a reduction of the electronic band gap in oxygen-chemisorbed MoS2. The results shine light on the fundamental understanding of chemical interactions between oxygen and MoS2 and provide an alternative way to achieve band gap engineering in MoS2. |