Sergey Morozov

@article{ISI:000559831500011,
title = {Electronic phase separation in multilayer rhombohedral graphite},
author = {Yanmeng Shi and Shuigang Xu and Yaping Yang and Sergey Slizovskiy and Sergey V Morozov and Seok-Kyun Son and Servet Ozdemir and Ciaran Mullan and Julien Barrier and Jun Yin and Alexey I Berdyugin and Benjamin A Piot and Takashi Taniguchi and Kenji Watanabe and Vladimir I Fal'ko and Kostya S Novoselov and A K Geim and Artem Mishchenko},
doi = {10.1038/s41586-020-2568-2},
times_cited = {104},
issn = {0028-0836},
year = {2020},
date = {2020-08-13},
journal = {NATURE},
volume = {584},
number = {7820},
pages = {210-+},
publisher = {NATURE RESEARCH},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Of the two stable forms of graphite, hexagonal and rhombohedral, the former is more common and has been studied extensively. The latter is less stable, which has so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics(1-6). Advances in van der Waals heterostructure technology(7)have now allowed us to make high-quality rhombohedral graphite films up to 50 graphene layers thick and study their transport properties. Here we show that the bulk electronic states in such rhombohedral graphite are gapped(8)and, at low temperatures, electron transport is dominated by surface states. Because of their proposed topological nature, the surface states are of sufficiently high quality to observe the quantum Hall effect, whereby rhombohedral graphite exhibits phase transitions between a gapless semimetallic phase and a gapped quantum spin Hall phase with giant Berry curvature. We find that an energy gap can also be opened in the surface states by breaking their inversion symmetry by applying a perpendicular electric field. Moreover, in rhombohedral graphite thinner than four nanometres, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly correlated electronic surface states.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:000301406800102,
title = {Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers},
author = {Liam Britnell and Roman V Gorbachev and Rashid Jalil and Branson D Belle and Fred Schedin and Mikhail I Katsnelson and Laurence Eaves and Sergey V Morozov and Alexander S Mayorov and Nuno M R Peres and Antonio Castro H Neto and Jon Leist and Andre K Geim and Leonid A Ponomarenko and Kostya S Novoselov},
doi = {10.1021/nl3002205},
times_cited = {850},
issn = {1530-6984},
year = {2012},
date = {2012-03-01},
journal = {NANO LETTERS},
volume = {12},
number = {3},
pages = {1707-1710},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {We investigate the electronic properties of ultrathin hexagonal boron nitride (h-BN) crystalline layers with different conducting materials (graphite, graphene, and gold) on either side of the barrier layer. The tunnel current depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field. It offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}