Verzhbitskiy, Ivan A; Mishra, Abhishek; Mitra, Sanchali; Zhang, Zhepeng; Das, Sarthak; Lau, Chit Siong; Lee, Rainer; Huang, Ding; Eda, Goki; Ang, Yee Sin; Goh, Kuan Eng Johnson Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy Journal Article ACS NANO, 19 (11), pp. 10878-10888, 2025, ISSN: 1936-0851. Abstract | Links | BibTeX @article{ISI:001445756900001,
title = {Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy},
author = {Ivan A Verzhbitskiy and Abhishek Mishra and Sanchali Mitra and Zhepeng Zhang and Sarthak Das and Chit Siong Lau and Rainer Lee and Ding Huang and Goki Eda and Yee Sin Ang and Kuan Eng Johnson Goh},
doi = {10.1021/acsnano.4c15086},
times_cited = {0},
issn = {1936-0851},
year = {2025},
date = {2025-03-13},
journal = {ACS NANO},
volume = {19},
number = {11},
pages = {10878-10888},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {One-dimensional (1D) nanoribbons (NRs) constitute rapidly advancing nanotechnology with significant potential for emerging applications such as quantum sensing and metrology. TiS3 nanoribbons exhibit strong in-plane crystal anisotropy, enabling robust 1D confinement and resilience to edge disorder. Nevertheless, charge transport in 1D TiS3 remains relatively unexplored, particularly at low temperatures, where high contact resistance impacts device performance and fundamentally limits its applications. Here, we engineer electrical contacts between a bulk metal and a 1D NR and explore the low-temperature characteristics of the 1D field-effect devices. We report ohmic contacts for 1D TiS3 with temperature-independent contact resistances as low as 2.7 +/- 0.3 k Omegamu m, enabling the study of charge transport at low temperatures (down to 35 mK) and clear observation of the Coulomb blockade effect. We demonstrate single-electron transport in 1D TiS3 and perform excited state spectroscopy and magnetospectroscopy, extracting an out-of-plane electron g-factor, g = 1.8 +/- 0.3.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
One-dimensional (1D) nanoribbons (NRs) constitute rapidly advancing nanotechnology with significant potential for emerging applications such as quantum sensing and metrology. TiS3 nanoribbons exhibit strong in-plane crystal anisotropy, enabling robust 1D confinement and resilience to edge disorder. Nevertheless, charge transport in 1D TiS3 remains relatively unexplored, particularly at low temperatures, where high contact resistance impacts device performance and fundamentally limits its applications. Here, we engineer electrical contacts between a bulk metal and a 1D NR and explore the low-temperature characteristics of the 1D field-effect devices. We report ohmic contacts for 1D TiS3 with temperature-independent contact resistances as low as 2.7 +/- 0.3 k Omegamu m, enabling the study of charge transport at low temperatures (down to 35 mK) and clear observation of the Coulomb blockade effect. We demonstrate single-electron transport in 1D TiS3 and perform excited state spectroscopy and magnetospectroscopy, extracting an out-of-plane electron g-factor, g = 1.8 +/- 0.3. |
