Lu Jiong

@article{ISI:001379965300001,
title = {Is Semiconducting Transition-Metal Dichalcogenide Suitable for Spin Pumping?},
author = {Bin Lu and Yue Niu and Qian Chen and Ping Kwan Johnny Wong and Qingjie Guo and Wei Jiang and Ashutosh Rath and Stephen J Pennycook and Lei Wang and Ke Xia and Ya Zhai and Andrew Thye Shen Wee and Wen Zhang},
doi = {10.1021/acs.nanolett.4c03469},
times_cited = {0},
issn = {1530-6984},
year = {2024},
date = {2024-12-17},
journal = {NANO LETTERS},
volume = {25},
number = {1},
pages = {35-40},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Spin pumping has been reported on interfaces formed with ferromagnetic metals and layered transition-metal dichalcogenides (TMDs), as signified by enhanced Gilbert damping parameters extracted from magnetodynamics measurements. However, whether the observed damping enhancement purely arises from the pumping effect has remained debatable, given that possible extrinsic disturbances on the interfaces cannot be excluded in most of the experiments. Here, we explore an atomically clean interface formed with CoFeB and atomically thin MoSe2, achieved by an all in situ growth strategy based on molecular beam epitaxy. Taking advantage of ferromagnetic resonance analysis, we find that the Gilbert damping of the CoFeB/MoSe2 interface closely resembles that of CoFeB/SiO2, suggesting the absence of spin pumping. With similar findings demonstrated on a few more representative interfaces, this work clarifies the unsuitability of semiconducting TMDs for spin pumping and suggests that the observed damping enhancement in the previous reports may be predominantly attributed to extrinsic contributions during the experimental process.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001133695400003,
title = {Modulation of magneto-dynamic properties of permalloy/holmium heterostructures with antiferromagnetic coupled interface},
author = {Mingming Tian and Qian Chen and Ping Kwan Johnny Wong and Ruobai Liu and Fabien Silly and Mathieu G Silly and Philippe Ohresser and Biao You and Jun Du and Andrew T S Wee and Juan-Carlos Rojas-Sanchez and Zhaocong Huang and Wen Zhang and Ya Zhai},
doi = {10.1063/5.0169500},
times_cited = {0},
issn = {0003-6951},
year = {2023},
date = {2023-12-25},
journal = {APPLIED PHYSICS LETTERS},
volume = {123},
number = {26},
publisher = {AIP Publishing},
address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
abstract = {Magneto-dynamics and its interfacial modulation have attracted much attention in energy-efficient and nonvolatile spintronic devices. In particular, the antiferromagnetic coupling at the interface plays a crucial role in spin dynamic behaviors. In this work, we utilize rare-earth holmium (Ho) to interface with transition-metal alloy Ni80Fe20(Py) and achieve a naturally formed antiferromagnetic coupling between Py and interfacial Ho via the magnetic proximity effect, as confirmed by element-specific synchrotron radiation x-ray magnetic circular dichroism hysteresis loops. Importantly, the antiferromagnetic coupled interface is preserved even at a low temperature of 4.2 K, which is below the Curie temperature of Ho. Using ferromagnetic resonance analysis, we reveal that the Gilbert damping and the interfacial spin mixing conductance of the Py/Ho bilayers are much larger than those of the Py/Pt and Py/Pd, suggesting a superior spin transparent efficiency on such an interface with an antiferromagnetic coupling. More importantly, upon the insertion of 2-nm-thick Cu, the antiferromagnetic coupling disappears, associated with the evident suppression of Gilbert damping. This strengthens the critical role of the antiferromagnetic coupled interface in the magneto-dynamics of the transition-metal/rare-earth bilayers and provides a promising way of magneto-dynamics modulation in antiferromagnet-based devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}