Li Xin
Group: Prof John Wang
CA2DM Publications:
2025 |
Li, Huanxin; Chen, Haotian; Pang, Boyi; Zhang, Jincan; Luo, Bingcheng; Silva, Ravi S P; Wang, Yi-Chi; Zhao, Siyu; Shearing, Paul R; Robinson, James B; Novoselov, Kostya S Van-der-Waals-forces-modulated graphene-P-phenyl-graphene carbon allotropes Journal Article NATURE COMMUNICATIONS, 16 (1), 2025. @article{ISI:001616374600008, title = {\textit{Van}-\textit{der}-\textit{Waals}-\textit{forces}-modulated graphene-P-phenyl-graphene carbon allotropes}, author = {Huanxin Li and Haotian Chen and Boyi Pang and Jincan Zhang and Bingcheng Luo and Ravi S P Silva and Yi-Chi Wang and Siyu Zhao and Paul R Shearing and James B Robinson and Kostya S Novoselov}, doi = {10.1038/s41467-025-64971-1}, times_cited = {0}, year = {2025}, date = {2025-11-14}, journal = {NATURE COMMUNICATIONS}, volume = {16}, number = {1}, publisher = {NATURE PORTFOLIO}, address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY}, abstract = {Graphene has received much attention due to its monoatomic, unique two-dimensional structure, which results in remarkable mechanical, physical, and electrical properties. However, synthesizing high-quality graphene-based composites with high conductivity and ionic mobility remains challenging. Here, we report an allotrope to the nanocarbon family, Graphene-P-phenyl-Graphene, synthesized by inserting pi-pi-conjugated p-phenyls between graphene layers and connecting them via C-C sigma bonds. Graphene-P-phenyl-Graphene is thermally and dynamically stable, as verified by density functional theory and molecular dynamics, and can be produced at kilogram scale. The p-phenyl bridges swell the layer spacing from similar to 0.34 to similar to 0.56 nm, reducing van der Waals forces and enhancing electron delocalization. Electrons in these separated graphene layers benefit from low mass and efficient 3D screening of charge scattering, resulting in high Hall mobility (10,000-13,000 cm(2) V-1 s(-1)) in freestanding films. The expanded spacing also enables decoupling of layer electrons and rapid ion storage and transport-even for large ions. For example, potassium-ion batteries using Graphene-P-phenyl-Graphene exhibit high reversible capacity, long-term stability, and high charge-discharge rates. Graphene-P-phenyl-Graphene holds promise for large-scale, portable, high-performance electronics with energy storage capabilities.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Graphene has received much attention due to its monoatomic, unique two-dimensional structure, which results in remarkable mechanical, physical, and electrical properties. However, synthesizing high-quality graphene-based composites with high conductivity and ionic mobility remains challenging. Here, we report an allotrope to the nanocarbon family, Graphene-P-phenyl-Graphene, synthesized by inserting pi-pi-conjugated p-phenyls between graphene layers and connecting them via C-C sigma bonds. Graphene-P-phenyl-Graphene is thermally and dynamically stable, as verified by density functional theory and molecular dynamics, and can be produced at kilogram scale. The p-phenyl bridges swell the layer spacing from similar to 0.34 to similar to 0.56 nm, reducing van der Waals forces and enhancing electron delocalization. Electrons in these separated graphene layers benefit from low mass and efficient 3D screening of charge scattering, resulting in high Hall mobility (10,000-13,000 cm(2) V-1 s(-1)) in freestanding films. The expanded spacing also enables decoupling of layer electrons and rapid ion storage and transport-even for large ions. For example, potassium-ion batteries using Graphene-P-phenyl-Graphene exhibit high reversible capacity, long-term stability, and high charge-discharge rates. Graphene-P-phenyl-Graphene holds promise for large-scale, portable, high-performance electronics with energy storage capabilities. |
2024 |
Lin, Fanrong; Liu, Jiawei; Lu, Huan; Liu, Xin; Liu, Ying; Hu, Zhili; Lyu, Pin; Zhang, Zhuhua; Martin, Jens; Guo, Wanlin; Liu, Yanpeng Evolution of Graphene Dirac Fermions in Electric Double-Layer Transistors with a Soft Barrier Journal Article ADVANCED FUNCTIONAL MATERIALS, 34 (34), 2024, ISSN: 1616-301X. @article{ISI:001195156600001, title = {Evolution of Graphene Dirac Fermions in Electric Double-Layer Transistors with a Soft Barrier}, author = {Fanrong Lin and Jiawei Liu and Huan Lu and Xin Liu and Ying Liu and Zhili Hu and Pin Lyu and Zhuhua Zhang and Jens Martin and Wanlin Guo and Yanpeng Liu}, doi = {10.1002/adfm.202400553}, times_cited = {7}, issn = {1616-301X}, year = {2024}, date = {2024-04-02}, journal = {ADVANCED FUNCTIONAL MATERIALS}, volume = {34}, number = {34}, publisher = {WILEY-V C H VERLAG GMBH}, address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY}, abstract = {The interface and dielectric environment of graphene transistors are of great importance to commercial circuit integrations. The tangling bond in oxide-based dielectric severely lagged the carrier mobility while the 2D dielectric layer (for instance, hexagonal boron nitride) unavoidably hastened complicated condensed physics even at room temperature. Herein, multilayer black phosphorus (BP) a versatile and widely-tunable dielectric candidate for manifesting graphene fermions is demonstrated. Because of hetero-interfacial charge redistributions, a vertical electric double-layer between the bottom BP layer and top graphene spontaneously forms with the central BP layer as a soft barrier. Under dual-gate modulation, abnormal step-like evolution of Dirac fermions and charge-transfer quantum Hall effect arises while the intrinsic Dirac behavior of graphene is preserved, ascribing to the gate-tunable charge redistributions of dielectric BP layer. Moreover, the electric double-layer transistors apply equally well to bilayer graphene with similar Dirac behavior but an enhanced interfacial charge interference. The findings not only create a new avenue to manipulate the fermions by assembling graphene with narrow-gapped 2D layered materials but also promote electric double-layer transistors as a new build block to design multifunctional devices.}, keywords = {}, pubstate = {published}, tppubtype = {article} } The interface and dielectric environment of graphene transistors are of great importance to commercial circuit integrations. The tangling bond in oxide-based dielectric severely lagged the carrier mobility while the 2D dielectric layer (for instance, hexagonal boron nitride) unavoidably hastened complicated condensed physics even at room temperature. Herein, multilayer black phosphorus (BP) a versatile and widely-tunable dielectric candidate for manifesting graphene fermions is demonstrated. Because of hetero-interfacial charge redistributions, a vertical electric double-layer between the bottom BP layer and top graphene spontaneously forms with the central BP layer as a soft barrier. Under dual-gate modulation, abnormal step-like evolution of Dirac fermions and charge-transfer quantum Hall effect arises while the intrinsic Dirac behavior of graphene is preserved, ascribing to the gate-tunable charge redistributions of dielectric BP layer. Moreover, the electric double-layer transistors apply equally well to bilayer graphene with similar Dirac behavior but an enhanced interfacial charge interference. The findings not only create a new avenue to manipulate the fermions by assembling graphene with narrow-gapped 2D layered materials but also promote electric double-layer transistors as a new build block to design multifunctional devices. |