Cao, Zhonghan; Lin, Fanrong; Gong, Gu; Chen, Hao; Martin, Jens Low Schottky barrier contacts to 2H-MoS2 by Sn electrodes Journal Article 23 APPLIED PHYSICS LETTERS, 116 (2), 2020, ISSN: 0003-6951. Abstract | Links | BibTeX @article{ISI:000518029000024,
title = {Low Schottky barrier contacts to 2H-MoS_{2} by Sn electrodes},
author = {Zhonghan Cao and Fanrong Lin and Gu Gong and Hao Chen and Jens Martin},
doi = {10.1063/1.5094890},
times_cited = {23},
issn = {0003-6951},
year = {2020},
date = {2020-01-13},
journal = {APPLIED PHYSICS LETTERS},
volume = {116},
number = {2},
publisher = {AMER INST PHYSICS},
address = {1305 WALT WHITMAN RD, STE 300, MELVILLE, NY 11747-4501 USA},
abstract = {The semiconductor MoS2 has attracted much attention owing to its sizable energy bandgap, significant spin-orbit coupling, and quantum effects such as the valley Hall effect and gate-induced superconductivity. However, in electronic devices, the energy bandgap usually gives rise to the formation of Schottky barriers at the interface to the contact metal, which may render devices intended for quantum transport inapplicable at low temperature. Therefore, the fabrication of Ohmic contacts operational at low temperature is crucial. Yet, it currently remains a substantial challenge to produce low resistive contacts with a simple process. We manifest that low temperature Ohmic contacts to mono- and few-layer MoS2 can be achieved with Tin (Sn) as the contact metal. Sn is directly evaporated onto MoS2, and hence, this establishes a much easier fabrication method than tunneling barriers, for example. We provide detailed device characterization, extract Schottky barrier heights, demonstrate multiterminal measurements, and propose a possible explanation: strain induced deformation of MoS2 imposed by Sn. Published under license by AIP Publishing.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
The semiconductor MoS2 has attracted much attention owing to its sizable energy bandgap, significant spin-orbit coupling, and quantum effects such as the valley Hall effect and gate-induced superconductivity. However, in electronic devices, the energy bandgap usually gives rise to the formation of Schottky barriers at the interface to the contact metal, which may render devices intended for quantum transport inapplicable at low temperature. Therefore, the fabrication of Ohmic contacts operational at low temperature is crucial. Yet, it currently remains a substantial challenge to produce low resistive contacts with a simple process. We manifest that low temperature Ohmic contacts to mono- and few-layer MoS2 can be achieved with Tin (Sn) as the contact metal. Sn is directly evaporated onto MoS2, and hence, this establishes a much easier fabrication method than tunneling barriers, for example. We provide detailed device characterization, extract Schottky barrier heights, demonstrate multiterminal measurements, and propose a possible explanation: strain induced deformation of MoS2 imposed by Sn. Published under license by AIP Publishing. |
