Gavin Koon Kok Wai

@article{ISI:001276091000001,
title = {Third-order nonlinear Hall effect in a quantum Hall system},
author = {Pan He and Hiroki Isobe and Gavin Kok Wai Koon and Jun You Tan and Junxiong Hu and Jingru Li and Naoto Nagaosa and Jian Shen},
doi = {10.1038/s41565-024-01730-1},
times_cited = {2},
issn = {1748-3387},
year = {2024},
date = {2024-07-24},
journal = {NATURE NANOTECHNOLOGY},
volume = {19},
number = {10},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {In two-dimensional systems, perpendicular magnetic fields can induce a bulk band gap and chiral edge states, which gives rise to the quantum Hall effect. The quantum Hall effect is characterized by zero longitudinal resistance (R-xx) and Hall resistance (R-xy) plateaus quantized to h/(upsilon e(2)) in the linear response regime, where upsilon is the Landau level filling factor, e is the elementary charge and h is Planck's constant. Here we explore the nonlinear response of monolayer graphene when tuned to a quantum Hall state. We observe a third-order Hall effect that exhibits a nonzero voltage plateau scaling cubically with the probe current. By contrast, the third-order longitudinal voltage remains zero. The magnitude of the third-order response is insensitive to variations in magnetic field (down to similar to 5 T) and in temperature (up to similar to 60 K). Moreover, the third-order response emerges in graphene devices with a variety of geometries, different substrates and stacking configurations. We term the effect third-order nonlinear response of the quantum Hall state and propose that electron-electron interaction between the quantum Hall edge states is the origin of the nonlinear response of the quantum Hall state.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}