Eda Goki

@article{ISI:001449775100029,
title = {Ultrafast thermo-optical control of spins in a 2D van der Waals semiconductor},
author = {Maciej Dabrowski and Sumit Haldar and Safe Khan and Paul S Keatley and Dimitros Sagkovits and Zekun Xue and Charlie Freeman and Ivan Verzhbitskiy and Theodor Griepe and Unai Atxitia and Goki Eda and Hidekazu Kurebayashi and Elton J G Santos and Robert J Hicken},
doi = {10.1038/s41467-025-58065-1},
times_cited = {0},
year = {2025},
date = {2025-03-21},
journal = {NATURE COMMUNICATIONS},
volume = {16},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Laser pulses provide one of the fastest means of manipulating electron spins in magnetic compounds and pave the way to ultrafast operation within magnetic recording, quantum computation and spintronics. However, effective management of the heat deposited during optical excitation is an open challenge. Layered two-dimensional (2D) van der Waals (vdW) materials possess unique thermal properties due to the highly anisotropic nature of their chemical bonding. Here we show how to control the rate of heat flow, and hence the magnetization dynamics, induced by an ultrafast laser pulse within the 2D ferromagnet Cr2Ge2Te6. Using time-resolved beam-scanning magneto-optical Kerr effect microscopy and microscopic spin modelling calculations, we show that by reducing the thickness of the magnetic layers, an enhancement of the heat dissipation rate into the adjacent substrate leads to a substantial reduction in the timescale for magnetization recovery from several nanoseconds down to a few hundred picoseconds. Finally, we demonstrate how the low thermal conductivity across vdW layers may be used to obtain magnetic domain memory behaviour, even after exposure to intense laser pulses. Our findings reveal the distinctive role of vdW magnets in the ultrafast control of heat conduction, spin dynamics and non-volatile memory.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001445756900001,
title = {Low-Temperature Contacts and the Coulomb Blockade Effect in Layered Nanoribbons with In-Plane Anisotropy},
author = {Ivan A Verzhbitskiy and Abhishek Mishra and Sanchali Mitra and Zhepeng Zhang and Sarthak Das and Chit Siong Lau and Rainer Lee and Ding Huang and Goki Eda and Yee Sin Ang and Kuan Eng Johnson Goh},
doi = {10.1021/acsnano.4c15086},
times_cited = {0},
issn = {1936-0851},
year = {2025},
date = {2025-03-13},
journal = {ACS NANO},
volume = {19},
number = {11},
pages = {10878-10888},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {One-dimensional (1D) nanoribbons (NRs) constitute rapidly advancing nanotechnology with significant potential for emerging applications such as quantum sensing and metrology. TiS3 nanoribbons exhibit strong in-plane crystal anisotropy, enabling robust 1D confinement and resilience to edge disorder. Nevertheless, charge transport in 1D TiS3 remains relatively unexplored, particularly at low temperatures, where high contact resistance impacts device performance and fundamentally limits its applications. Here, we engineer electrical contacts between a bulk metal and a 1D NR and explore the low-temperature characteristics of the 1D field-effect devices. We report ohmic contacts for 1D TiS3 with temperature-independent contact resistances as low as 2.7 +/- 0.3 k Omegamu m, enabling the study of charge transport at low temperatures (down to 35 mK) and clear observation of the Coulomb blockade effect. We demonstrate single-electron transport in 1D TiS3 and perform excited state spectroscopy and magnetospectroscopy, extracting an out-of-plane electron g-factor, g = 1.8 +/- 0.3.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001416560700001,
title = {Electron Ptychography for Atom-by-Atom Quantification of 1D Defect Complexes in Monolayer MoS_{2}},
author = {Leyi Loh and Shoucong Ning and Daria Kieczka and Yuan Chen and Jianmin Yang and Zhe Wang and Stephen J Pennycook and Goki Eda and Alexander L Shluger and Michel Bosman},
doi = {10.1021/acsnano.4c14988},
times_cited = {0},
issn = {1936-0851},
year = {2025},
date = {2025-02-07},
journal = {ACS NANO},
volume = {19},
number = {6},
pages = {6195-6208},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Defect complexes can induce beneficial functionalities in two-dimensional (2D) semiconductors. However, understanding their formation mechanism with single-atom sensitivity has proven to be challenging for light elements using conventional transmission electron microscopy (TEM) techniques. Here, we demonstrate the atom-resolved formation of various one-dimensional (1D) defect complexes-consisting of rhenium dopants, sulfur interstitials, and sulfur vacancies-in monolayer MoS2 by applying electron ptychography to our four-dimensional scanning transmission electron microscopy (4D-STEM) data sets. Our image resolution of 0.35 angstrom and a spatial precision of 2 pm allow us to achieve accurate matching between experimental structures and density functional theory (DFT) simulations at the atomic level. Additionally, we utilize out-of-focus ptychography to observe defect formation processes at dose rates comparable to those used in conventional TEM imaging, while maintaining a large field of view. This study demonstrates the systematic application of electron ptychography to extensive 4D-STEM data sets for quantitative defect imaging in 2D materials. We provide direct, atomically precise evidence that critical defect densities govern the formation of extended 1D defect complexes. For instance, we show that sulfur single-vacancy lines form when the vacancy density reaches 5 x 1013 cm-2 and transform into double-vacancy lines beyond 8 x 1013 cm-2. Rhenium-dopant lines emerge at a dopant concentration higher than 3 x 1013 cm-2, where metastable sulfur interstitial-vacancy lines also form as the cumulative electron dose reaches 3 x 105 e/angstrom 2, initiating a local nucleation of the 1T ' phase. Our results highlight the potential of electron ptychography for high-precision defect characterization and engineering in ultrathin 2D materials.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001360396900001,
title = {Nb impurity-bound excitons as quantum emitters in monolayer WS_{2}},
author = {Leyi Loh and Yi Wei Ho and Fengyuan Xuan and Andres Granados del Aguila and Yuan Chen and See Yoong Wong and Jingda Zhang and Zhe Wang and Kenji Watanabe and Takashi Taniguchi and Paul J Pigram and Michel Bosman and Su Ying Quek and Maciej Koperski and Goki Eda},
doi = {10.1038/s41467-024-54360-5},
times_cited = {0},
year = {2024},
date = {2024-11-20},
journal = {NATURE COMMUNICATIONS},
volume = {15},
number = {1},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Point defects in crystalline solids behave as optically addressable individual quantum systems when present in sufficiently low concentrations. In two-dimensional (2D) semiconductors, such quantum defects hold potential as versatile single photon sources. Here, we report the synthesis and optical properties of Nb-doped monolayer WS2 in the dilute limit where the average spacing between individual dopants exceeds the optical diffraction limit, allowing the emission spectrum to be studied at the single-dopant level. We show that these individual dopants exhibit common features of quantum emitters, including narrow emission lines (with linewidths <1 meV), strong spatial confinement, and photon antibunching. These emitters consistently occur within a narrow spectral range across multiple samples, distinct from common quantum emitters in van der Waals (vdW) materials that show large ensemble broadening. Analysis of the Zeeman splitting reveals that they can be attributed to bound exciton complexes comprising dark excitons and negatively charged Nb.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001273247900001,
title = {Spin-Glass States Generated in a van der Waals Magnet by Alkali-Ion Intercalation},
author = {Safe Khan and Eva S Y Aw and Liam A V Nagle-Cocco and Aakanksha Sud and Sukanya Ghosh and Mohammed K B Subhan and Zekun Xue and Charlie Freeman and Dimitrios Sagkovits and Araceli Gutierrez-Llorente and Ivan Verzhbitskiy and Daan M Arroo and Christoph W Zollitsch and Goki Eda and Elton J G Santos and Sian E Dutton and Steven T Bramwell and Chris A Howard and Hidekazu Kurebayashi},
doi = {10.1002/adma.202400270},
times_cited = {1},
issn = {0935-9648},
year = {2024},
date = {2024-07-22},
journal = {ADVANCED MATERIALS},
volume = {36},
number = {36},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Tuning magnetic properties in layered van der Waals (vdW) materials has captured significant attention due to the efficient control of ground states by heterostructuring and external stimuli. Electron doping by electrostatic gating, interfacial charge transfer, and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie temperature (TC) and magnetic anisotropy. Here, an uncharted role of intercalation is discovered to generate magnetic frustration. As a model study, Na atoms are intercalated into the vdW gaps of pristine Cr2Ge2Te6 (CGT) where generated magnetic frustration leads to emerging spin-glass states coexisting with a ferromagnetic order. A series of dynamic magnetic susceptibility measurements/analysis confirms the formation of magnetic clusters representing slow dynamics with a distribution of relaxation times. The intercalation also modifies other macroscopic physical parameters including the significant enhancement of TC from 66 to 240 K and the switching of magnetic easy-hard axis direction. This study identifies intercalation as a unique route to generate emerging frustrated spin states in simple vdW crystals.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001205711600001,
title = {Upconversion electroluminescence in 2D semiconductors integrated with plasmonic tunnel junctions},
author = {Zhe Wang and Vijith Kalathingal and Maxim Trushin and Jiawei Liu and Junyong Wang and Yongxin Guo and Barbaros Ozyilmaz and Christian A Nijhuis and Goki Eda},
doi = {10.1038/s41565-024-01650-0},
times_cited = {4},
issn = {1748-3387},
year = {2024},
date = {2024-04-19},
journal = {NATURE NANOTECHNOLOGY},
volume = {19},
number = {7},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Plasmonic tunnel junctions are a unique electroluminescent system in which light emission occurs via an interplay between tunnelling electrons and plasmonic fields instead of electron-hole recombination as in conventional light-emitting diodes. It was previously shown that placing luminescent molecules in the tunneling pathway of nanoscopic tunnel junctions results in peculiar upconversion electroluminescence where the energy of emitted photons exceeds that of excitation electrons. Here we report the observation of upconversion electroluminescence in macroscopic van der Waals plasmonic tunnel junctions comprising gold and few-layer graphene electrodes separated by a similar to 2-nm-thick hexagonal boron nitride tunnel barrier and a monolayer semiconductor. We find that the semiconductor ground exciton emission is triggered at excitation electron energies lower than the semiconductor optical gap. Interestingly, this upconversion is reached in devices operating at a low conductance (<10(-6) S) and low power density regime (<10(2) W cm(-2)), defying explanation through existing proposed mechanisms. By examining the scaling relationship between plasmonic and excitonic emission intensities, we elucidate the role of inelastic electron tunnelling dipoles that induce optically forbidden transitions in the few-layer graphene electrode and ultrafast hot carrier transfer across the van der Waals interface.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001139483700001,
title = {Engineering the Outcoupling Pathways in Plasmonic Tunnel Junctions via Photonic Mode Dispersion for Low-Loss Waveguiding},
author = {Zhe Wang and Vijith Kalathingal and Goki Eda and Christian A Nijhuis},
doi = {10.1021/acsnano.3c10832},
times_cited = {2},
issn = {1936-0851},
year = {2023},
date = {2023-12-26},
journal = {ACS NANO},
volume = {18},
number = {1},
pages = {1149-1156},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Outcoupling of plasmonic modes excited by inelastic electron tunneling (IET) across plasmonic tunnel junctions (TJs) has attracted significant attention due to low operating voltages and fast excitation rates. Achieving selectivity among various outcoupling channels, however, remains a challenging task. Employing nanoscale antennas to enhance the local density of optical states (LDOS) associated with specific outcoupling channels partially addressed the problem, along with the integration of conducting 2D materials into TJs, improving the outcoupling to guided modes with particular momentum. The disadvantage of such methods is that they often involve complex fabrication steps and lack fine-tuning options. Here, we propose an alternative approach by modifying the dielectric medium surrounding TJs. By employing a simple multilayer substrate with a specific permittivity combination for the TJs under study, we show that it is possible to optimize mode selectivity in outcoupling to a plasmonic or a photonic-like mode characterized by distinct cutoff behaviors and propagation length. Theoretical and experimental results obtained with a SiO2-SiN-glass multilayer substrate demonstrate high relative coupling efficiencies of (62.77 +/- 1.74)% and (29.07 +/- 0.72)% for plasmonic and photonic-like modes, respectively. The figure-of-merit, which quantifies the tradeoff between mode outcoupling and propagation lengths (tens of mu m) for both modes, can reach values as high as 180 and 140. The demonstrated approach allows LDOS engineering and customized TJ device performance, which are seamlessly integrated with standard thin film fabrication protocols. Our experimental device is well-suited for integration with silicon nitride photonics platforms.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}

@article{ISI:001133459300001,
title = {Optical Gain Spectrum and Confinement Factor of a Monolayer Semiconductor in an Ultrahigh-Quality Cavity},
author = {Tianhua Ren and Junyong Wang and Kaizhen Han and Yuye Kang and Annie Kumar and Gong Zhang and Zhe Wang and Rupert F Oulton and Goki Eda and Xiao Gong},
doi = {10.1021/acs.nanolett.3c03357},
times_cited = {0},
issn = {1530-6984},
year = {2023},
date = {2023-12-08},
journal = {NANO LETTERS},
volume = {23},
number = {24},
pages = {11601-11607},
publisher = {AMER CHEMICAL SOC},
address = {1155 16TH ST, NW, WASHINGTON, DC 20036 USA},
abstract = {Two-dimensional (2D) semiconductors have attracted great attention as a novel class of gain materials for low-threshold, on-chip coherent light sources. Despite several experimental reports on lasing, the underlying gain mechanism of 2D materials remains elusive due to a lack of key information, including modal gain and the confinement factor. Here, we demonstrate a novel approach to directly determine the absorption coefficient of monolayer WS2 by characterizing the whispering gallery modes in a van der Waals microdisk cavity. By exploiting the cavity's high intrinsic quality factor of 2.5 x 10(4), the absorption coefficient spectrum and confinement factor are experimentally resolved with unprecedented accuracy. The excitonic gain reduces the WS2 absorption coefficient by 2 x 10(4) cm(-1) at room temperature, and the experimental confinement factor is found to agree with the theoretical prediction. These results are essential for unveiling the gain mechanism in emergent, low-threshold 2D-semiconductor-based laser devices.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}