Li, Chen; Lin, Wang; Yue, Peng; Xuewei, Feng; Sarkar, Soumya; Sifan, Li; Bochang, Li; Liang, Liu; Kaizhen, Han; Xiao, Gong; Jingsheng, Chen; Yan, Liu; Genquan, Han; Ang, Kah-Wee A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide Journal Article 82 ADVANCED ELECTRONIC MATERIALS, 6 (6), 2020, ISSN: 2199-160X. Abstract | Links | BibTeX @article{ISI:000530860500001,
title = {A van der Waals Synaptic Transistor Based on Ferroelectric Hf_{0.5}Zr_{0.5}O_{2} and 2D Tungsten Disulfide},
author = {Chen Li and Wang Lin and Peng Yue and Feng Xuewei and Soumya Sarkar and Li Sifan and Li Bochang and Liu Liang and Han Kaizhen and Gong Xiao and Chen Jingsheng and Liu Yan and Han Genquan and Kah-Wee Ang},
doi = {10.1002/aelm.202000057},
times_cited = {82},
issn = {2199-160X},
year = {2020},
date = {2020-05-08},
journal = {ADVANCED ELECTRONIC MATERIALS},
volume = {6},
number = {6},
publisher = {WILEY},
address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA},
abstract = {Neuromorphic computing on the hardware level is promising for performing ever-increasing data-centric tasks owing to its superiority to conventional von Neumann architecture in terms of energy efficiency and learning ability. One key aspect to its implementation is the development of artificial synapses that can effectively emulate the multiple functionalities exhibited by their biological counterparts. Here, building on an inorganic ferroelectric gate stack integrated with a 2D layered semiconductor (WS2), a new type of ferroelectricity-based synaptic transistor that differs from those relying on interface traps or floating gate configuration is reported. By virtue of a 6 nm thick ferroelectric hafnium zirconium oxide by atomic layer deposition and postannealing treatment, the device shows a channel resistance change ratio above 10(5) corresponding to opposite ferroelectric polarization direction. Furthermore, by applying electrical stimulus to the gate, it demonstrates good capability to mimic various synaptic behaviors including long-term potentiation, long-term depression, spike-amplitude-dependent plasticity, and spike-rate-dependent plasticity. Given the inherent compatibility of the ferroelectric gate stack with existing fabrication technology, and the reliability of ferroelectricity engineering, this work paves the way toward practical implementation of synaptic devices in neuromorphic circuits.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Neuromorphic computing on the hardware level is promising for performing ever-increasing data-centric tasks owing to its superiority to conventional von Neumann architecture in terms of energy efficiency and learning ability. One key aspect to its implementation is the development of artificial synapses that can effectively emulate the multiple functionalities exhibited by their biological counterparts. Here, building on an inorganic ferroelectric gate stack integrated with a 2D layered semiconductor (WS2), a new type of ferroelectricity-based synaptic transistor that differs from those relying on interface traps or floating gate configuration is reported. By virtue of a 6 nm thick ferroelectric hafnium zirconium oxide by atomic layer deposition and postannealing treatment, the device shows a channel resistance change ratio above 10(5) corresponding to opposite ferroelectric polarization direction. Furthermore, by applying electrical stimulus to the gate, it demonstrates good capability to mimic various synaptic behaviors including long-term potentiation, long-term depression, spike-amplitude-dependent plasticity, and spike-rate-dependent plasticity. Given the inherent compatibility of the ferroelectric gate stack with existing fabrication technology, and the reliability of ferroelectricity engineering, this work paves the way toward practical implementation of synaptic devices in neuromorphic circuits. |
