Chen, Li; Li, Si; Feng, Xuewei; Wang, Lin; Huang, Xin; Tee, Benjamin C -K; Ang, Kah-Wee Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors Journal Article ADVANCED ELECTRONIC MATERIALS, 4 (9), 2018, ISSN: 2199-160X. Abstract | Links | BibTeX @article{ISI:000444071300022,
title = {Gigahertz Integrated Circuits Based on Complementary Black Phosphorus Transistors},
author = {Li Chen and Si Li and Xuewei Feng and Lin Wang and Xin Huang and Benjamin C -K Tee and Kah-Wee Ang},
doi = {10.1002/aelm.201800274},
times_cited = {0},
issn = {2199-160X},
year = {2018},
date = {2018-09-01},
journal = {ADVANCED ELECTRONIC MATERIALS},
volume = {4},
number = {9},
publisher = {WILEY},
address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA},
abstract = {Black phosphorus (BP) has attracted enormous interest for logic applications due to its unique electronic properties. However, pristine BP exhibits predominant p-type channel conductance, which limits the realization of complementary circuits unless an effective n-type doping is found. Here, a practical approach to transform the conductivity of BP from p-type to n-type via a spatially controlled aluminum (Al) doping is proposed. Symmetrical threshold voltage for the pair of p-type and n-type BP field-effect transistors can be achieved by tuning the Al doping concentration. The complementary inverter circuit shows a clear logic inversion with a high voltage gain of up to approximate to 11 at a supply voltage (V-DD) of 1.5 V. Simultaneously, a high noise margin of 0.27 x V-DD is achieved for both low (NML) and high (NMH) input voltages, indicating excellent noise immunity. Moreover, a three-stage ring oscillator with a theoretical frequency above 1.8 GHz and microwatt level power dissipation is modeled, which shows a low propagation delay per stage. This study demonstrates a practical approach to fabricate high performance complementary integrated circuits on a homogenous BP channel material, paving the way toward complex cascaded circuits and sensor interface applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Black phosphorus (BP) has attracted enormous interest for logic applications due to its unique electronic properties. However, pristine BP exhibits predominant p-type channel conductance, which limits the realization of complementary circuits unless an effective n-type doping is found. Here, a practical approach to transform the conductivity of BP from p-type to n-type via a spatially controlled aluminum (Al) doping is proposed. Symmetrical threshold voltage for the pair of p-type and n-type BP field-effect transistors can be achieved by tuning the Al doping concentration. The complementary inverter circuit shows a clear logic inversion with a high voltage gain of up to approximate to 11 at a supply voltage (V-DD) of 1.5 V. Simultaneously, a high noise margin of 0.27 x V-DD is achieved for both low (NML) and high (NMH) input voltages, indicating excellent noise immunity. Moreover, a three-stage ring oscillator with a theoretical frequency above 1.8 GHz and microwatt level power dissipation is modeled, which shows a low propagation delay per stage. This study demonstrates a practical approach to fabricate high performance complementary integrated circuits on a homogenous BP channel material, paving the way toward complex cascaded circuits and sensor interface applications. |
