2019
|
Feng, Xuewei; Li, Yida; Wang, Lin; Yu, Zhi Gen; Chen, Shuai; Tan, Wee-Chong; Macadam, Nasiruddin; Hu, Guohua; Gong, Xiao; Hasan, Tawfique; Zhang, Yong-Wei; Thean, Aaron Voon-Yew; and, Kah-Wee Ang First Demonstration of a Fully-Printed MoS2 RRAM on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse Inproceedings 13 pp. T88-T89, IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2019. Abstract | BibTeX @inproceedings{ISI:000555822600040,
title = {First Demonstration of a Fully-Printed MoS_{2} RRAM on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse},
author = {Xuewei Feng and Yida Li and Lin Wang and Zhi Gen Yu and Shuai Chen and Wee-Chong Tan and Nasiruddin Macadam and Guohua Hu and Xiao Gong and Tawfique Hasan and Yong-Wei Zhang and Aaron Voon-Yew Thean and Kah-Wee Ang and},
times_cited = {13},
year = {2019},
date = {2019-01-01},
journal = {2019 SYMPOSIUM ON VLSI TECHNOLOGY},
pages = {T88-T89},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
abstract = {We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 10(7). The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP).},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 10(7). The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP). |
Huang, Li; Dong, Bowei; Ma, Yiming; Lee, Chengkuo; and, Kah-Wee Ang First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm Inproceedings IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2019, ISSN: 2380-9248. Abstract | BibTeX @inproceedings{ISI:000553550000185,
title = {First Demonstration of Waveguide-Integrated Black Phosphorus Electro-Optic Modulator for Mid-Infrared Beyond 4 μm},
author = {Li Huang and Bowei Dong and Yiming Ma and Chengkuo Lee and Kah-Wee Ang and},
times_cited = {0},
issn = {2380-9248},
year = {2019},
date = {2019-01-01},
journal = {2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
abstract = {We demonstrate the first black phosphorus (BP) electro-optic modulator integrated with Si waveguide for the mid-infrared (MIR) spectrum from 3.85 to 4.1 mu m. Optical properties of BP were effectively modulated by a vertical electric field from a top gate through Burstein Moss and Franz-Keldysh effects. With a gate bias of -4 V, a modulation depth of similar to 5 dB was achieved with a small active footprint of merely 225 mu m(2). The modulation depth was observed to increase with decreasing light power. The results are promising for operations under weak-light condition with low-power consumption and compact footprint at room temperature. Our device lays a stepping stone towards realizing on-chip MIR systems for applications such as bio-sensing and environment monitoring.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate the first black phosphorus (BP) electro-optic modulator integrated with Si waveguide for the mid-infrared (MIR) spectrum from 3.85 to 4.1 mu m. Optical properties of BP were effectively modulated by a vertical electric field from a top gate through Burstein Moss and Franz-Keldysh effects. With a gate bias of -4 V, a modulation depth of similar to 5 dB was achieved with a small active footprint of merely 225 mu m(2). The modulation depth was observed to increase with decreasing light power. The results are promising for operations under weak-light condition with low-power consumption and compact footprint at room temperature. Our device lays a stepping stone towards realizing on-chip MIR systems for applications such as bio-sensing and environment monitoring. |
Chen, Li; Liang, Dan; Yu, Zhigen; Li, Sifan; Feng, Xuewei; Li, Bochang; Li, Yesheng; Zhang, Yong-Wei; and, Kah-Wee Ang Ultrasensitive Flexible Strain Sensor based on Two-Dimensional InSe for Human Motion Surveillance Inproceedings IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2019, ISSN: 2380-9248. Abstract | Links | BibTeX @inproceedings{ISI:000553550000046,
title = {Ultrasensitive Flexible Strain Sensor based on Two-Dimensional InSe for Human Motion Surveillance},
author = {Li Chen and Dan Liang and Zhigen Yu and Sifan Li and Xuewei Feng and Bochang Li and Yesheng Li and Yong-Wei Zhang and Kah-Wee Ang and},
doi = {10.1109/iedm19573.2019.8993476},
times_cited = {0},
issn = {2380-9248},
year = {2019},
date = {2019-01-01},
journal = {2019 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
abstract = {We demonstrate for the first time a flexible strain sensor based on two-dimensional Indium Selenide (InSe) material for human motion surveillance. The InSe exhibits a highly strain-tunable bandgap property, which enables an effective modulation of electrical conductivity and piezoresistivity. A large gauge factor (GF) of 32 and 36 is achieved even when subject to a low tensile and compressive strain down to +/- 0.25 %, respectively, manifesting its superior strain sensitivity. Moreover, the GF and piezoresistance coefficient can be significantly enhanced by 8 and 9 folds, respectively, through electrostatic gating. Our work reveals a highly tunable piezoresistive effect and low Young's modulus in InSe that is promising for realizing ultrasensitive human motion sensors, in which the performance can be further enhanced via gating effect using a three-terminal device configuration.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate for the first time a flexible strain sensor based on two-dimensional Indium Selenide (InSe) material for human motion surveillance. The InSe exhibits a highly strain-tunable bandgap property, which enables an effective modulation of electrical conductivity and piezoresistivity. A large gauge factor (GF) of 32 and 36 is achieved even when subject to a low tensile and compressive strain down to +/- 0.25 %, respectively, manifesting its superior strain sensitivity. Moreover, the GF and piezoresistance coefficient can be significantly enhanced by 8 and 9 folds, respectively, through electrostatic gating. Our work reveals a highly tunable piezoresistive effect and low Young's modulus in InSe that is promising for realizing ultrasensitive human motion sensors, in which the performance can be further enhanced via gating effect using a three-terminal device configuration. |
2018
|
Huang, Li; Dong, Bowei; Guo, Xin; Chang, Yuhua; Chen, Nan; Huang, Xin; Wang, Hong; Lee, Chengkuo; and, Kah-Wee Ang Integration of 2D Black Phosphorus Phototransistor and Silicon Photonics Waveguide System Towards Mid-Infrared On-Chip Sensing Applications Inproceedings pp. 161-162, IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2018. Abstract | BibTeX @inproceedings{ISI:000465075200061,
title = {Integration of 2D Black Phosphorus Phototransistor and Silicon Photonics Waveguide System Towards Mid-Infrared On-Chip Sensing Applications},
author = {Li Huang and Bowei Dong and Xin Guo and Yuhua Chang and Nan Chen and Xin Huang and Hong Wang and Chengkuo Lee and Kah-Wee Ang and},
times_cited = {0},
year = {2018},
date = {2018-01-01},
journal = {2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGY},
pages = {161-162},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
abstract = {We demonstrate the first black phosphorus phototransistor integrated with Si photonics waveguide system towards mid-infrared (MIR) sensing. At a wavelength of 3.78 mu m, the black phosphorus phototransistor achieves a high responsivity of 0.7 A/W under a small drain bias of -1 V at room-temperature. Additionally, the device offers gate and drain bias tunability to suppress dark current while simultaneously optimize photo-response performance. Our results reveal the potential of black phosphorus for MIR detection to enable the realization of integrated on-chip systems for MIR sensing applications.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate the first black phosphorus phototransistor integrated with Si photonics waveguide system towards mid-infrared (MIR) sensing. At a wavelength of 3.78 mu m, the black phosphorus phototransistor achieves a high responsivity of 0.7 A/W under a small drain bias of -1 V at room-temperature. Additionally, the device offers gate and drain bias tunability to suppress dark current while simultaneously optimize photo-response performance. Our results reveal the potential of black phosphorus for MIR detection to enable the realization of integrated on-chip systems for MIR sensing applications. |
2017
|
Tan, Wee Chong; Huang, Li; Ng, Rui Jie; Wang, Lin; and, Kah-Wee Ang Black Phosphorus Carbide Infrared Phototransistor with Wide Spectrum Sensing for IoT Applications Inproceedings IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2017, ISSN: 2380-9248. Abstract | BibTeX @inproceedings{ISI:000424868900046,
title = {Black Phosphorus Carbide Infrared Phototransistor with Wide Spectrum Sensing for IoT Applications},
author = {Wee Chong Tan and Li Huang and Rui Jie Ng and Lin Wang and Kah-Wee Ang and},
times_cited = {0},
issn = {2380-9248},
year = {2017},
date = {2017-01-01},
journal = {2017 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)},
publisher = {IEEE},
address = {345 E 47TH ST, NEW YORK, NY 10017 USA},
abstract = {We demonstrate a novel black phosphorus carbide (b-PC) phototransistor with a wide absorption spectrum that spans most molecular fingerprints till 8,000 nm and a tunable responsivity and response time at an excitation wavelength of 2,004 nm. The b-PC phototransistor achieves a high responsivity (R) of 2,163 A/W and a short response time of 5.6 ps, which renders it suitable for high speed and weak signal sensing. Its noise-equivalent-power NEPshot similar to 1.3 fW/Hz(1/2) indicates infrared radiation in the femto-watt range can be detected above the shot noise level of this phototransistor. Under the same excitation power, its responsivity and detectivity performance in ambient and room temperature conditions are currently ahead of all recent top performing photodetectors based on 2D materials, showing promise for future internet-of-things (IoT) applications.},
keywords = {},
pubstate = {published},
tppubtype = {inproceedings}
}
We demonstrate a novel black phosphorus carbide (b-PC) phototransistor with a wide absorption spectrum that spans most molecular fingerprints till 8,000 nm and a tunable responsivity and response time at an excitation wavelength of 2,004 nm. The b-PC phototransistor achieves a high responsivity (R) of 2,163 A/W and a short response time of 5.6 ps, which renders it suitable for high speed and weak signal sensing. Its noise-equivalent-power NEPshot similar to 1.3 fW/Hz(1/2) indicates infrared radiation in the femto-watt range can be detected above the shot noise level of this phototransistor. Under the same excitation power, its responsivity and detectivity performance in ambient and room temperature conditions are currently ahead of all recent top performing photodetectors based on 2D materials, showing promise for future internet-of-things (IoT) applications. |
