Fang, Hanyan; Mahalingam, Harshitra; Li, Xinzhe; Han, Xu; Qiu, Zhizhan; Han, Yixuan; Noori, Keian; Dulal, Dikshant; Chen, Hongfei; Lyu, Pin; Yang, Tianhao; Li, Jing; Su, Chenliang; Chen, Wei; Cai, Yongqing; Neto, Castro A H; Novoselov, Kostya S; Rodin, Aleksandr; Lu, Jiong Atomically precise vacancy-assembled quantum antidots Journal Article 27 NATURE NANOTECHNOLOGY, 18 (12), 2023, ISSN: 1748-3387. Abstract | Links | BibTeX @article{ISI:001062548200002,
title = {Atomically precise vacancy-assembled quantum antidots},
author = {Hanyan Fang and Harshitra Mahalingam and Xinzhe Li and Xu Han and Zhizhan Qiu and Yixuan Han and Keian Noori and Dikshant Dulal and Hongfei Chen and Pin Lyu and Tianhao Yang and Jing Li and Chenliang Su and Wei Chen and Yongqing Cai and Castro A H Neto and Kostya S Novoselov and Aleksandr Rodin and Jiong Lu},
doi = {10.1038/s41565-023-01495-z},
times_cited = {27},
issn = {1748-3387},
year = {2023},
date = {2023-08-31},
journal = {NATURE NANOTECHNOLOGY},
volume = {18},
number = {12},
publisher = {NATURE PORTFOLIO},
address = {HEIDELBERGER PLATZ 3, BERLIN, 14197, GERMANY},
abstract = {Patterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe2. Such quantum antidots consist of highly ordered single-vacancy lattices, spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of single vacancies in quantum antidots strengthens the cumulative repulsive potential and consequently enhances the collective interference of multiple-pocket scattered quasiparticles inside quantum antidots, creating multilevel quantum hole states with a tunable gap from the telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of quantum antidots are geometry protected and thus survive on oxygen substitutional doping. Therefore, single-vacancy-assembled quantum antidots exhibit unprecedented robustness and property tunability, positioning them as highly promising candidates for advancing quantum information and photocatalysis technologies.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Patterning antidots, which are regions of potential hills that repel electrons, into well-defined antidot lattices creates fascinating artificial periodic structures, leading to anomalous transport properties and exotic quantum phenomena in two-dimensional systems. Although nanolithography has brought conventional antidots from the semiclassical regime to the quantum regime, achieving precise control over the size of each antidot and its spatial period at the atomic scale has remained challenging. However, attaining such control opens the door to a new paradigm, enabling the creation of quantum antidots with discrete quantum hole states, which, in turn, offer a fertile platform to explore novel quantum phenomena and hot electron dynamics in previously inaccessible regimes. Here we report an atomically precise bottom-up fabrication of a series of atomic-scale quantum antidots through a thermal-induced assembly of a chalcogenide single vacancy in PtTe2. Such quantum antidots consist of highly ordered single-vacancy lattices, spaced by a single Te atom, reaching the ultimate downscaling limit of antidot lattices. Increasing the number of single vacancies in quantum antidots strengthens the cumulative repulsive potential and consequently enhances the collective interference of multiple-pocket scattered quasiparticles inside quantum antidots, creating multilevel quantum hole states with a tunable gap from the telecom to far-infrared regime. Moreover, precisely engineered quantum hole states of quantum antidots are geometry protected and thus survive on oxygen substitutional doping. Therefore, single-vacancy-assembled quantum antidots exhibit unprecedented robustness and property tunability, positioning them as highly promising candidates for advancing quantum information and photocatalysis technologies. |
