Zheng, Wenwen; Pazos, Sebastian; Yuan, Yue; Zhu, Kaichen; Shen, Yaqing; Ping, Yue; Alharbi, Osamah; Krotkus, Simonas; Pasko, Sergej; Mischke, Jan; Yengel, Emre; Henning, Alex; Elkazzi, Salim; Lanza, Mario Scalable Production of Highly-Reliable Graphene-Based Microchips Journal Article ADVANCED MATERIALS, 37 (43), 2025, ISSN: 0935-9648. Abstract | Links | BibTeX @article{ISI:001549394900001,
title = {Scalable Production of Highly-Reliable Graphene-Based Microchips},
author = {Wenwen Zheng and Sebastian Pazos and Yue Yuan and Kaichen Zhu and Yaqing Shen and Yue Ping and Osamah Alharbi and Simonas Krotkus and Sergej Pasko and Jan Mischke and Emre Yengel and Alex Henning and Salim Elkazzi and Mario Lanza},
doi = {10.1002/adma.202510501},
times_cited = {0},
issn = {0935-9648},
year = {2025},
date = {2025-08-14},
journal = {ADVANCED MATERIALS},
volume = {37},
number = {43},
publisher = {WILEY-V C H VERLAG GMBH},
address = {POSTFACH 101161, 69451 WEINHEIM, GERMANY},
abstract = {Graphene is a gapless 2D material that could be used to fabricate superior electronic devices and circuits, particularly useful in the fields of telecommunication and sensing. While promising performance has been demonstrated at the laboratory scale, graphene integrated circuits at the wafer level suffer from poor reliability due to native defects, especially at interfaces with dielectrics and electrodes. Here, we show the fabrication of highly reliable graphene-based microchips, containing transistors and frequency doublers, on 200 mm wafers through a multi-project wafer tape-out. Our transistors use multilayer hexagonal boron nitride (hBN) as gate dielectric, and they exhibit record performance in terms of reliability. In particular, our hBN/graphene transistors show ultra-low hysteresis below 20 mV and negligible shifts of the on-state current and the charge neutrality point even after 2100 cycles. The ultra-stable response of our hBN/graphene transistors contrasts with that of devices using metal-oxide gate dielectrics (HfO2, Al2O3), which exhibit severe degradation after a few dozens of cycles. These results, consistent across multiple devices, show low variability and demonstrate a scalable process for mass production of graphene-based microchips.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Graphene is a gapless 2D material that could be used to fabricate superior electronic devices and circuits, particularly useful in the fields of telecommunication and sensing. While promising performance has been demonstrated at the laboratory scale, graphene integrated circuits at the wafer level suffer from poor reliability due to native defects, especially at interfaces with dielectrics and electrodes. Here, we show the fabrication of highly reliable graphene-based microchips, containing transistors and frequency doublers, on 200 mm wafers through a multi-project wafer tape-out. Our transistors use multilayer hexagonal boron nitride (hBN) as gate dielectric, and they exhibit record performance in terms of reliability. In particular, our hBN/graphene transistors show ultra-low hysteresis below 20 mV and negligible shifts of the on-state current and the charge neutrality point even after 2100 cycles. The ultra-stable response of our hBN/graphene transistors contrasts with that of devices using metal-oxide gate dielectrics (HfO2, Al2O3), which exhibit severe degradation after a few dozens of cycles. These results, consistent across multiple devices, show low variability and demonstrate a scalable process for mass production of graphene-based microchips. |
