Aaron Voon-Yew Thean
Degree: PhD
Position: Dean
Affiliation: NUS – Department of Electrical and Computer Engineering
Research Type: Experiment
Office: EA-07-26
Email: eletvya@nus.edu.sg
Contact: (65) 6516 6471
Website: https://www.ece.nus.edu.sg/staff/bio/tvya.html
CA2DM Publications:
2019 |
Feng, Xuewei; Li, Yida; Wang, Lin; Chen, Shuai; Yu, Zhi Gen; Tan, Wee Chong; Macadam, Nasiruddin; Hu, Guohua; Huang, Li; Chen, Li; Gong, Xiao; Chi, Dongzhi; Hasan, Tawfique; Thean, Aaron Voon-Yew; Zhang, Yong-Wei; Ang, Koh-Wee A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy Journal Article ADVANCED ELECTRONIC MATERIALS, 5 (12), 2019, ISSN: 2199-160X. @article{ISI:000486813700001, title = {A Fully Printed Flexible MoS_{2} Memristive Artificial Synapse with Femtojoule Switching Energy}, author = {Xuewei Feng and Yida Li and Lin Wang and Shuai Chen and Zhi Gen Yu and Wee Chong Tan and Nasiruddin Macadam and Guohua Hu and Li Huang and Li Chen and Xiao Gong and Dongzhi Chi and Tawfique Hasan and Aaron Voon-Yew Thean and Yong-Wei Zhang and Koh-Wee Ang}, doi = {10.1002/aelm.201900740}, times_cited = {6}, issn = {2199-160X}, year = {2019}, date = {2019-09-19}, journal = {ADVANCED ELECTRONIC MATERIALS}, volume = {5}, number = {12}, publisher = {WILEY}, address = {111 RIVER ST, HOBOKEN 07030-5774, NJ USA}, abstract = {Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward "system-on-plastics". Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol-jet-printed Ag/MoS2/Ag memristor is realized in a cross-bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS2) ink platform. The fully printed devices exhibit an ultra-low switching voltage (0.18 V), a high switching ratio (10(7)), a wide range of tuneable resistance states (10-10(10) omega) for multi-bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS2 memristor exhibits both volatile and non-volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short-term and long-term plasticity of biological synapses, demonstrating its potential to enable energy-efficient artificial neuromorphic computing.}, keywords = {}, pubstate = {published}, tppubtype = {article} } Realization of memristors capable of storing and processing data on flexible substrates is a key enabling technology toward "system-on-plastics". Recent advancements in printing techniques show enormous potential to overcome the major challenges of the current manufacturing processes that require high temperature and planar topography, which may radically change the system integration approach on flexible substrates. However, fully printed memristors are yet to be successfully demonstrated due to the lack of a robust printable switching medium and a reliable printing process. An aerosol-jet-printed Ag/MoS2/Ag memristor is realized in a cross-bar structure by developing a scalable and low temperature printing technique utilizing a functional molybdenum disulfide (MoS2) ink platform. The fully printed devices exhibit an ultra-low switching voltage (0.18 V), a high switching ratio (10(7)), a wide range of tuneable resistance states (10-10(10) omega) for multi-bit data storage, and a low standby power consumption of 1 fW and a switching energy of 4.5 fJ per transition set. Moreover, the MoS2 memristor exhibits both volatile and non-volatile resistive switching behavior by controlling the current compliance levels, which efficiently mimic the short-term and long-term plasticity of biological synapses, demonstrating its potential to enable energy-efficient artificial neuromorphic computing. |
Feng, Xuewei; Li, Yida; Wang, Lin; Yu, Zhi Gen; Chen, Shuai; Tan, Wee-Chong; Macadam, Nasiruddin; Hu, Guohua; Gong, Xiao; Hasan, Tawfique; Zhang, Yong-Wei; Thean, Aaron Voon-Yew; and, Kah-Wee Ang First Demonstration of a Fully-Printed MoS2 RRAM on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse Inproceedings 13 pp. T88-T89, IEEE, 345 E 47TH ST, NEW YORK, NY 10017 USA, 2019. @inproceedings{ISI:000555822600040, title = {First Demonstration of a Fully-Printed MoS_{2} RRAM on Flexible Substrate with Ultra-Low Switching Voltage and its Application as Electronic Synapse}, author = {Xuewei Feng and Yida Li and Lin Wang and Zhi Gen Yu and Shuai Chen and Wee-Chong Tan and Nasiruddin Macadam and Guohua Hu and Xiao Gong and Tawfique Hasan and Yong-Wei Zhang and Aaron Voon-Yew Thean and Kah-Wee Ang and}, times_cited = {13}, year = {2019}, date = {2019-01-01}, journal = {2019 SYMPOSIUM ON VLSI TECHNOLOGY}, pages = {T88-T89}, publisher = {IEEE}, address = {345 E 47TH ST, NEW YORK, NY 10017 USA}, abstract = {We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 10(7). The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP).}, keywords = {}, pubstate = {published}, tppubtype = {inproceedings} } We demonstrate the first fully-printed resistive random access memory (RRAM) on flexible substrate using 2D layered dichalcogenides, exhibiting ultra-low switching voltage down to 0.18 V and an on/off ratio up to 10(7). The novel switching medium is printed by formulating multilayer molybdenum disulfide (MoS2) into 3D-printable ink. Both volatile and non-volatile resistive switching are achieved within a single device by varying current compliance, which enables the implementation of electronic synapse with neuromorphic functionality including short-term plasticity (STP) and long-term plasticity (LTP). |