Wang, Yi; Zhu, Dapeng; Wu, Yang; Yang, Yumeng; Yu, Jiawei; Ramaswamy, Rajagopalan; Mishra, Rahul; Shi, Shuyuan; Elyasi, Mehrdad; Teo, Kie-Leong; Wu, Yihong; Yang, Hyunsoo Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques Journal Article NATURE COMMUNICATIONS, 8 , 2017, ISSN: 2041-1723. Abstract | Links | BibTeX @article{ISI:000414662500005,
title = {Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques},
author = {Yi Wang and Dapeng Zhu and Yang Wu and Yumeng Yang and Jiawei Yu and Rajagopalan Ramaswamy and Rahul Mishra and Shuyuan Shi and Mehrdad Elyasi and Kie-Leong Teo and Yihong Wu and Hyunsoo Yang},
doi = {10.1038/s41467-017-01583-4},
times_cited = {0},
issn = {2041-1723},
year = {2017},
date = {2017-11-08},
journal = {NATURE COMMUNICATIONS},
volume = {8},
publisher = {NATURE PUBLISHING GROUP},
address = {MACMILLAN BUILDING, 4 CRINAN ST, LONDON N1 9XW, ENGLAND},
abstract = {Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of similar to 1-1.75 in the thin Bi2Se3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, similar to 6 x 10(5) A cm(-2), which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in topological insulator-based spintronic applications.},
keywords = {},
pubstate = {published},
tppubtype = {article}
}
Topological insulators with spin-momentum-locked topological surface states are expected to exhibit a giant spin-orbit torque in the topological insulator/ferromagnet systems. To date, the topological insulator spin-orbit torque-driven magnetization switching is solely reported in a Cr-doped topological insulator at 1.9 K. Here we directly show giant spin-orbit torque-driven magnetization switching in a Bi2Se3/NiFe heterostructure at room temperature captured using a magneto-optic Kerr effect microscope. We identify a large charge-to-spin conversion efficiency of similar to 1-1.75 in the thin Bi2Se3 films, where the topological surface states are dominant. In addition, we find the current density required for the magnetization switching is extremely low, similar to 6 x 10(5) A cm(-2), which is one to two orders of magnitude smaller than that with heavy metals. Our demonstration of room temperature magnetization switching of a conventional 3d ferromagnet using Bi2Se3 may lead to potential innovations in topological insulator-based spintronic applications. |