Van der Waals contacts on 2D Semiconductors

19/05/2020 @ 4:00 PM – 5:00 PM Asia/Singapore Timezone

CA2DM Homely Atmosphere Online Seminars (CHAOS)

Speaker: Professor Manish Chhowalla
Affiliation: Materials Science & Metallurgy, University of Cambridge, UK
Abstract Details:
Professor Manish Chhowalla will describe the realization of ultra-clean vdW contacts between 3D metals and single layer MoS2. Using scanning transmission electron microscopy (STEM) imaging, they show that the 3D metal and 2D MoS2 interface is atomically sharp with no detectable chemical interaction, suggesting van-der-Waals-type bonding between the metal and MoS2. They show that the contact resistance of indium electrodes is ~ 800 Ω-μm – amongst the lowest observed for metal electrodes on MoS2 and is translated into high performance FETs with mobility in excess of 160 cm2-V-s-1 at room temperature without encapsulation. They also demonstrate low contact resistance of 220 Ω-μm on 2D NbS2 and near ideal band offsets, indicative of defect free interfaces, in WS2 and WSe2.

Prof Manish Chhowalla will also describe their efforts on making good p-type contacts on 2D semiconductors.

About the Speaker:
Professor Manish Chhowalla is the Goldsmiths’ Professor of Materials Science at the University of Cambridge. His research interests are in the fundamental studies of atomically thin two-dimensional transition metal dichalcogenides (TMDs). In particular, his group studies the optical and electronic properties of different phases of 2D TMDs. He has demonstrated that it is possible to induce phase transformations in atomically thin materials and utilize phases with disparate properties for field effect transistors, catalysis, and energy storage. Prof Chhowalla is a Fellow of the Materials Research Society, Institute of Physics, the Royal Society of Chemistry and Churchill College. He was the founding Editor in Chief of Applied Materials Today and is now the Associate Editor of ACS Nano. He has been on the Clarivate Highly Cited Researchers since 2016.

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