Superconductivity in Few Molecular Layer NbSe2

When:
02/06/2014 @ 2:40 PM – 3:20 PM Asia/Singapore Timezone
2014-06-02T14:40:00+08:00
2014-06-02T15:20:00+08:00
Where:
S16 Level 6 – Theory conference room

Speaker: Simon Bending
Affiliation: Bath University, UK
Abstract Details: The isolation of graphene in 2004 has led to a dramatic renewal of interest in van der Waals bonded transition metal dichalcogenides. These exhibit a wide range of electronic ground states, e.g., superconducting, metallic, charge density wave and semiconducting, which can be tuned by varying the number of molecular layers and electrostatic doping. We describe systematic investigations of superconductivity in few molecular layer NbSe2 field effect transistors. All superconducting devices show multiple resistive transitions which we attribute to disorder in the layer stacking. The conductivity in the normal state and Tc both decrease as the electron concentration is increased with a back gate, consistent with a reduction in the density of states that is predicted theoretically. The magnetic field dependence of different resistive transitions allows values of the zero temperature upper critical field, Hc2(0), and coherence length, xi(0), to be independently estimated and compared. Results are interpreted in terms of available theoretical models.