Speaker: Assistant Professor Gong Xiao
Affiliation: Electrical and Computer Engineering, NUS
Host: Assistant Professor Vitor M. Pereira
Location: Click HERE for directions
Abstract Details: Future electron systems would require large-scale heterogeneous integration where advanced transistors and devices with new materials can be reliably manufactured on a common substrate. Such heterogeneous integration will enable interconnections between various circuit components such as RF, optoelectronic, photonic, and spintronic devices. Enormous benefits can be derived in terms of functionality, cost and power per function, and system optimization, in a future where such benefits can no longer be attained by complementary metal-oxide-semiconductor (CMOS) scaling. These, in turn, will significantly aid in the advancement of more-than-Moore applications, including the Internet of Things, next-generation communications, and wearable and flexible technology. This talk would cover recent research progress to drive the vision of heterogeneous integration to address CMOS scaling challenges, including advanced transistors using various novel materials for low power and high performance applications, photonic devices, and the heterogeneous integration of different types of semiconductor devices.
About the Speaker: Dr. Gong Xiao is an Assistant Professor in the ECE Department of the National University of Singapore (NUS) since January, 2017. His research interest includes transistors with high mobility channels and advanced structures, emerging steep slope transistors, photonic devices, and integration of logic and high speed circuits. He has more than 120 publications in international journals and conferences, including 16 invited papers, 10 papers in the International Electron Devices Meeting (IEDM), and 10 papers in the VLSI Symposium. His work has been widely reported by various high-profile magazines such as IEEE Spectrum, Compound Semiconductors, Semiconductor Today, and etc.