{"id":834,"date":"2024-05-08T11:59:04","date_gmt":"2024-05-08T03:59:04","guid":{"rendered":"https:\/\/graphene.nus.edu.sg\/barbaros\/?post_type=publication&p=834"},"modified":"2024-05-09T09:07:13","modified_gmt":"2024-05-09T01:07:13","slug":"observation-of-weak-localization-in-dual-gated-bilayer-mos2","status":"publish","type":"publication","link":"https:\/\/graphene.nus.edu.sg\/barbaros\/publication\/observation-of-weak-localization-in-dual-gated-bilayer-mos2\/","title":{"rendered":"Observation of weak localization in dual-gated bilayer MoS2"},"content":{"rendered":"

We investigate the magnetoresistance of a dual-gated bilayer\u00a0<\/span>Mo<\/span><\/span>S<\/span><\/span><\/span>2<\/span><\/span><\/span><\/span><\/span><\/span><\/span><\/span>\u00a0encapsulated by hexagonal boron nitride. At low magnetic fields (<\/span>|<\/span><\/span>B<\/span><\/span>|<\/span><\/span><<\/span><\/span>0.5<\/span><\/span><\/span>T<\/span><\/span><\/span><\/span><\/span><\/span>), we observe a negative magnetoresistance, which we identify as the weak localization effect. We determine both the phase coherence length and mean free path as a function of electron density and displacement field. Both characteristic lengths show a similar monotonic increase with electron density, while they are not affected by the displacement field. We further investigate the dephasing mechanism by measuring the temperature dependence of the phase coherence length. Our results suggest that when only the lower spin-orbit split bands (<\/span>K<\/span><\/span>\u2191<\/span><\/span><\/span>,<\/span><\/span>\u00a0<\/span><\/span>K<\/span><\/span><\/span>\u2032<\/span><\/span><\/span><\/span>\u2193<\/span><\/span><\/span><\/span><\/span><\/span><\/span>) contribute to transport is Coulomb scattering the dominant source of decoherence, while intervalley scattering seems not to play a relevant role in this regime. This observation is consistent with the picture of spin-polarized valleys (spin-valley locking), where the intrinsic spin-orbit coupling protects the spin states, rather than introducing an additional dephasing mechanism as in other materials.<\/span><\/p>\n

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This breakthrough opens up new possibilities in low-temperature growth of 2D material, with implications for a wide range of industries. We are incredibly proud of our team\u2019s dedication and hard work in making this achievement possible. For more details, please refer to the\u00a0link<\/a>.\u00a0<\/span>Let\u2019s continue pushing boundaries and driving innovation together!<\/div>\n<\/div>\n<\/div>\n","protected":false},"featured_media":835,"comment_status":"open","ping_status":"closed","template":"","publication_taxonomy":[5],"class_list":["post-834","publication","type-publication","status-publish","has-post-thumbnail","hentry","publication_taxonomy-research"],"yoast_head":"\nObservation of weak localization in dual-gated bilayer MoS2 - Barbaros Group<\/title>\n<meta name=\"robots\" content=\"index, follow, max-snippet:-1, max-image-preview:large, max-video-preview:-1\" \/>\n<link rel=\"canonical\" href=\"https:\/\/graphene.nus.edu.sg\/barbaros\/publication\/observation-of-weak-localization-in-dual-gated-bilayer-mos2\/\" \/>\n<meta property=\"og:locale\" content=\"en_US\" \/>\n<meta property=\"og:type\" content=\"article\" \/>\n<meta property=\"og:title\" content=\"Observation of weak localization in dual-gated bilayer MoS2 - Barbaros Group\" \/>\n<meta property=\"og:description\" content=\"We investigate the magnetoresistance of a dual-gated bilayer\u00a0MoS2\u00a0encapsulated by hexagonal boron nitride. 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