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Jeol Electron Beam Lithographer Specifications

Acceleration voltage

25 kV, 50 kV, 100 kV

Beam current

30 pA to 20 nA

Stitching accuracy (100kV)

+/- 15 nm

Overlay accuracy (100kV)

+/- 10 nm

Stage movement

190 mm x 170 mm

Writing area

150 mm x 150 mm

Automatic cassette loader
(Substrate size)

10 cassettes
(3mm up to 150mm)


High speed writing mode

Beam current

400 pA to 5 nA

Minimum line width

50 nm to 100 nm

Write field

500 μm


High resolution writing mode

Beam current

100 pA

Minimum line width

10 nm

Write field

62.5 μm

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