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Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

TitleTuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom
Publication TypeJournal Article
Year of Publication2015
AuthorsWang, Dandan, Fracasso Davide, Nurbawono Argo, Annadata Harshini V., Sangeeth Suchand C. S., Yuan Li, and Nijhuis Christian A.
JournalAdvanced Materials
Volume27
Pagination6689–+
Date Published11/2015
Abstract

The dielectric response and electrical properties of junctions based on self-assembled monolayers (SAMs) of the form S(CH2)(11)X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000-fold increase in the tunneling rate and a fourfold increase of the dielectric constant (epsilon(r)) with increasing polarizability of X are found.

DOI10.1002/adma.201502968

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