You are here

Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride

TitleMolecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride
Publication TypeJournal Article
Year of Publication2017
AuthorsFu, Deyi, Zhao Xiaoxu, Zhang Yu-Yang, Li Linjun, Xu Hai, Jang A.-Rang, Yoon Seong In, Song Peng, Poh Sock Mui, Ren Tianhua, Ding Zijing, Fu Wei, Shin Tae Joo, Shin Hyeon Suk, Pantelides Sokrates T., Zhou Wu, and Loh Kian Ping
JournalJ. Am. Chem. Soc.
Volume139
Pagination9392–9400
Date Published07/2017
ISSN0002-7863
Keywordsatomic layers, chemical-vapor-deposition, direct growth, grain-boundaries, high-quality monolayer, large-area, photoluminescence, piezoelectricity, single-layer mos2, transport-properties
Abstract

Atomically thin molybdenum disulfide (MoS2), a direct-band-gap semiconductor, is promising for applications in electronics and optoelectronics, but the scalable synthesis of highly crystalline film remains challenging. Here we report the successful epitaxial growth of a continuous, uniform, highly crystalline monolayer MoS2 film on hexagonal boron nitride (h-BN) by molecular beam epitaxy. Atomic force microscopy and electron microscopy studies reveal that MoS2 grown on h-BN primarily consists of two types of nucleation grains (0 aligned and 60 degrees antialigned domains). By adopting a high growth temperature and ultralow precursor flux, the formation of 60 degrees antialigned grains is largely suppressed. The resulting perfectly aligned grains merge seamlessly into a highly crystalline film. Large-scale monolayer MoS2 film can be grown on a 2 in. h-BN/sapphire wafer, for which surface morphology and Raman mapping confirm good spatial uniformity. Our study represents a significant step in the scalable synthesis of highly crystalline MoS2 films on atomically flat surfaces and paves the way to large-scale applications.

DOI10.1021/jacs.7b05131

Theme inspired by Danetsoft