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A modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study

TitleA modified Schottky model for graphene-semiconductor (3D/2D) contact: A combined theoretical and experimental study
Publication TypeBook Chapter
Year of Publication2016
AuthorsLiang, Shi-Jun, Hu Wei, Di Bartolomeo A., Adam Shaffique, and Ang Lay Kee
Book Title2016 {Ieee} {International} {Electron} {Devices} {Meeting} (iedm)
PaginationUNSP 14.4
PublisherIeee
CityNew York
ISBN Number978-1-5090-3902-9
Abstract

In this paper we carry out a theoretical and experimental study of the nature of graphene/semiconductor Schottky contact. We present a simple and parameter-free carrier transport model of graphene/semiconductor Schottky contact derived from quantum statistical theory, which is validated by the quantum Landauer theory and first-principle calculations. The proposed model can well explain experimental results for samples of different types of graphene/semiconductor Schottky contact.

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