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Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects

TitleEngineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects
Publication TypeJournal Article
Year of Publication2016
AuthorsLiu, Bo, Zhao Weijie, Ding Zijing, Verzhbitskiy Ivan, Li Linjun, Lu Junpeng, Chen Jianyi, Eda Goki, and Loh Kian Ping
JournalAdv. Mater.
Volume28
Pagination6457–+
Date Published08/2016
ISSN0935-9648
Keywords2-dimensional electron-gas, light-emitting-diodes, photoluminescence, reflection spectroscopy, semiconductor, single-layer mos2, states, transistors, transition, wse2
Abstract

Intrinsic electrical and excitonic properties of monolayer transition-metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid-state back gates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.

DOI10.1002/adma.201504876

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