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Effects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET

TitleEffects of Contact Placement and Intra/Interlayer Interaction in Current Distribution of Black Phosphorus Sub-10-nm FET
Publication TypeJournal Article
Year of Publication2017
AuthorsLuo, Sheng, Lam Kai-Tak, Wang BaoKai, Hsu Chuang-Han, Huang Wen, Yao Liang-Zi, Bansil Arun, Lin Hsin, and Liang Gengchiau
JournalIEEE Trans. Electron Devices
Volume64
Pagination579–586
Date Published02/2017
ISSN0018-9383
Keywords2-dimensional materials, band-structure, Black phosphorus (BP), current distribution, devices, electronics, field-effect transistors, graphene, intra/interlayer interaction, performance, Quantum transport, resistance, Schottky-barrier FETs (SBFETs), solids, thickness, top-/side-contact
Abstract

Black phosphorus (BP) has been proposed as the channel material in the next generation ultrascaled CMOS devices. In order to gain insight into the current characteristics in 2-D layered materials, the current distribution of a few-layer BP Schottky barrier FET is investigated via state-of-the-art quantum device simulations. Approximately 40% of the total currentwas foundto be concentrated in the top layer when the device was switched on, with the remaining current distributed among the other layers. In comparison, similar to 80% of the current concentrated belowthe surface in a Si device with the same structure. These features are related to the strength of the intra/interlayer interaction in few-layer BP and are unique to 2-D layered materials. Moreover, the current distribution and the device performance were different for the top-and side-contacted devices, with the side-contacted devices yielding lower resistance compared with the top-contacted devices.

DOI10.1109/TED.2016.2635690

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